Reliability degradation of high density DRAM cell transistor junction leakage current induced by band-to-defect tunneling under the off-state bias-temperature stress

被引:0
作者
Kim, YP
Park, YW
Moon, JT
Kim, SU
机构
来源
39TH ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM 2001 | 2001年
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
摘要
The band-to-defect tunneling (BDT) induced junction leakage current of high density DRAM cell transistor under the off-state bias-temperature (B-T) stress was studied in detail for the first time. It was found that the BDT leakage current is the most critical for limiting the cell transistor scaling. The new off-state B-T stress was proven to be a very effective reliability assessment tool for leakage current degradation of the DRAM cell transistor. It was also found to be useful for assessing reliability degradation of future high density DRAMs.
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页码:1 / 6
页数:6
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