Lightly doped n-type tensile-strained single-crystalline GeSn-on-insulator structures formed by lateral liquid-phase crystallization

被引：9

作者：

Oka, Hiroshi ^{[1
]}

Tomita, Takashi ^{[1
]}

Hosoi, Takuji ^{[1
]}

Shimura, Takayoshi ^{[1
]}

Watanabe, Heiji ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Suita, Osaka 5650871, Japan

来源：

APPLIED PHYSICS EXPRESS | 2018年 / 11卷 / 01期

关键词：

SI;

D O I：

10.7567/APEX.11.011304

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A tensile-strained single-crystalline n-type GeSn-on-insulator structure was demonstrated by lateral liquid-phase crystallization of an Sb-doped GeSn layer, and the diffusion and activation behaviors of Sb atoms in a liquid-phase-grown GeSn wire were investigated. A photoluminescence-based study revealed that a substantial amount of Sb was swept out during the liquid-phase growth of the GeSn wire. A thin-film transistor based on an Sb-doped GeSn wire on a quartz substrate exhibited n-channel accumulation-mode operation, and the temperature dependence of field-effect mobility revealed that the single-crystalline GeSn wire is a lightly doped n-type (similar to 10(17)cm(-3)). The combination of Sb-doped n-type and undoped p-type GeSn wires would bean ideal platform for GeSn-based optoelectronic integration. (C) 2018 The Japan Society of Applied Physics

引用

页数：4

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