Free and localized positively charged excitons in the emission spectrum of GaAs/AlGaAs quantum wells

被引:8
作者
Volkov, OV [1 ]
Kukushkin, IV
von Klitzing, K
Eberl, K
机构
[1] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow Region, Russia
[2] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
基金
俄罗斯基础研究基金会;
关键词
D O I
10.1134/1.567852
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The recombination emission spectra of an excitonic complex (A(0)X) localized on a neutral acceptor, which have previously been attributed to a positively charged exciton (X+), are investigated. Satellites arising around the main luminescence line as a result of recoil processes during recombination of the complex which leave the surviving hole in an excited state are observed and investigated. It is shown in a computational model based on the Luttinger Hamiltonian that the energy splittings between the main line and the satellites correspond to an in-barrier impurity center located a definite distance from the well. It is shown that as the magnetic field increases, a transition is observed from the singlet ground state of the complex to a multiplet state. (C) 1998 American Institute of Physics.
引用
收藏
页码:236 / 242
页数:7
相关论文
共 10 条
  • [1] EXCITON MIXING IN QUANTUM WELLS
    BAUER, GEW
    ANDO, T
    [J]. PHYSICAL REVIEW B, 1988, 38 (09) : 6015 - 6030
  • [2] Shakeup processes in the recombination spectra of negatively charged excitons
    Finkelstein, G
    Shtrikman, H
    BarJoseph, I
    [J]. PHYSICAL REVIEW B, 1996, 53 (19): : 12593 - 12596
  • [3] QUANTUM THEORY OF CYCLOTRON RESONANCE IN SEMICONDUCTORS - GENERAL THEORY
    LUTTINGER, JM
    [J]. PHYSICAL REVIEW, 1956, 102 (04): : 1030 - 1041
  • [4] Photoluminescence due to positively charged excitons in undoped GaAs/AlxGa1-xAs quantum T wells
    Osborne, JL
    Shields, AJ
    Pepper, M
    Bolton, FM
    Ritchie, DA
    [J]. PHYSICAL REVIEW B, 1996, 53 (19): : 13002 - 13010
  • [5] Long-lived charged multiple-exciton complexes in strong magnetic fields
    Palacios, JJ
    Yoshioka, D
    MacDonald, AH
    [J]. PHYSICAL REVIEW B, 1996, 54 (04) : R2296 - R2299
  • [6] A MODEL FOR THE NEUTRAL DONOR BOUND EXCITON SYSTEM IN INP AT HIGH MAGNETIC-FIELD
    RORISON, J
    HERBERT, DC
    DEAN, PJ
    SKOLNICK, MS
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (35): : 6435 - 6453
  • [7] Influence of excess electrons and magnetic fields on Mott-Wannier excitons in GaAs quantum wells
    Shields, AJ
    Pepper, M
    Ritchie, DA
    Simmons, MY
    [J]. ADVANCES IN PHYSICS, 1995, 44 (01) : 47 - 72
  • [8] Magneto-optical spectroscopy of two-dimensional holes in GaAs/AlxGa1-xAs single heterojunctions
    Volkov, OV
    Zhitomirskii, VE
    Kukushkin, IV
    Dietsche, W
    vonKlitzing, K
    Fischer, A
    Eberl, K
    [J]. PHYSICAL REVIEW B, 1997, 56 (12): : 7541 - 7548
  • [9] Excitons and excitonic complexes in GaAs/AlGaAs quantum wells with a low-density quasi-two-dimensional electron and hole channel
    Volkov, OV
    Zhitomirskii, VE
    Kukushkin, IV
    von Klitzing, K
    Eberl, K
    [J]. JETP LETTERS, 1998, 67 (09) : 744 - 750
  • [10] Charged and neutral excitonic complexes in GaAs/AlGaAs quantum wells
    Volkov, OV
    Zhitomirskii, VE
    Kukushkin, IV
    Bisti, VE
    von Klitzing, K
    Eberl, K
    [J]. JETP LETTERS, 1997, 66 (11) : 766 - 772