High mobility of a three-dimensional hole gas in parabolic quantum wells grown on GaAs(311)A substrates

被引：9
|
作者：
Lamas, TE
Quivy, AA
Sergio, CS
Gusev, GM
Portal, JC
机构：
[1] Univ Sao Paulo, Inst Fis, Lab Novos Mat Semicond, BR-05315970 Sao Paulo, Brazil
[2] Univ Fed Amazonas, Inst Ciencias Exatas, Dept Fis, BR-69077000 Manaus, Amazonas, Brazil
[3] Grenoble High Magnet Field Lab, F-38042 Grenoble, France
[4] Inst Natl Sci Appl, F-31077 Toulouse, France
[5] Inst Univ France, F-75005 Paris, France
来源：
JOURNAL OF APPLIED PHYSICS | 2005年 / 97卷 / 07期
基金：
巴西圣保罗研究基金会;
关键词：
D O I：
10.1063/1.1888041
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The transport properties of a three-dimensional hole gas were investigated in wide parabolic quantum wells grown by molecular beam epitaxy on top of GaAs(311)A substrates. The p-type doping was performed using silicon and the parabolic potential was achieved with the digital-alloy technique. Hall-effect and Shubnikov-de Haas measurements carried out at low temperature revealed that the carrier mobility was more than twice higher than the one usually obtained from similar samples grown on GaAs(100) substrates using beryllium. (C) 2005 American Institute of Physics.
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页数：3
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