Schottky barrier heights of contact metals to p-type ZnSe

Schottky barrier heights (SBHs) of a variety of metals (fn, Cd, Nb, Ti, W, Cu, Ag, Au, Ni, Pt, and Se) contacting to p-ZnSe grown by a molecular beam epitaxy method were determined by analyzing capacitance-voltage (C-V) and/or current density-voltage (J-V) curves. The SBH values of the Au and Ni contacts were determined from intersections of straight lines of the C-2-V curves to be 1.23 and 1.13 eV, respectively. The J-V calculations provided a large SBH value of 1.2 +/- 0.1 eV fora variety of metals, indicating that the Fermi-level could be pinned at the contact interface. Reduction of the SBH values to a level lower than 0.4 eV and/or increase of doping concentrations to a level higher than 10(20) cm(-3) are essential to obtain an ohmic contact with contact resistivity of around 10(-3) Ohm.cm(2).