4H-SiC self-aligned implant-diffused structure for power DMOSFETs

被引：2

作者：

Suvorov, AV ^{[1
]}

Lipkin, LA ^{[1
]}

Johnson, GM ^{[1
]}

Singh, R ^{[1
]}

Palmour, JW ^{[1
]}

机构：

[1] Cree Res Inc, Durham, NC 27703 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

diffusion; DMOSFET; implantation; power devices;

D O I：

10.4028/www.scientific.net/MSF.338-342.1275

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper we report the first self-aligned vertical implant-diffused (VID) and lateral implant diffused (LID) MOSFET test structures in 4H-SiC by using the differing diffusivities of implanted boron and nitrogen in silicon carbide. Boron diffusion was studied with and without nitrogen co-implants. The optimal diffusion conditions resulted in a 1 mum lateral diffusion width. A blocking voltage of 300 V was achieved in these test structures with a blocking layer thickness of only about 2 mum.

引用

页码：1275 / 1278

页数：4

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