Thermodynamic study of the chemical vapor deposition in the SiCl3CH3-NH3-H2 system

被引：2
|
作者：
Ren, Haitao [1 ]
Zhang, Litong [1 ]
Su, Kehe [2 ]
Zeng, Qingfeng [1 ]
Guan, Kang [1 ]
Cheng, Laifei [1 ]
机构：
[1] Northwestern Polytech Univ, Sci & Technol Thermostruct Composite Mat Lab, Xian 710072, Shaanxi, Peoples R China
[2] Northwestern Polytech Univ, Sch Nat & Appl Sci, Xian 710072, Shaanxi, Peoples R China
来源：
CHEMICAL PHYSICS LETTERS | 2015年 / 623卷
关键词：
DENSITY-FUNCTIONAL THEORY; GAS-PHASE REACTIONS; EXCITATION-ENERGIES; SILICON-CARBIDE; MOLLER-PLESSET; NITRIDE; CVD;
D O I：
10.1016/j.cplett.2015.01.042
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The gas-phase reaction thermodynamic of the chemical vapor deposition in the SiCl3CH3-NH3-H-2 system was investigated with a relatively complete set of 443 species, in which the thermochemistry data include the heat capacities, entropies, enthalpies of formation, and Gibbs energies of formation were calculated. Five condensed phases, silicon carbide (alpha-SiC and beta-SiC), silicon nitride (Si3N4), graphite (C) and silicon (Si) were taken into consideration. The distribution of the equilibrium concentration of the 443 species was obtained. The effects of temperature and reactant ratios of SiCl3CH3/(SiCl3CH3 + NH3) on the formation and yield of condensed phases were discussed. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码：29 / 36
页数：8
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