A Hybrid Micro-Pixel Based Deep Ultraviolet Light-Emitting Diode Lamp

被引:32
作者
Hwang, Seongmo [2 ]
Islam, Monirul [2 ]
Zhang, Bin [2 ]
Lachab, Mohamed [1 ]
Dion, Joe [2 ]
Heidari, Ahmad [2 ]
Nazir, Haseeb [2 ]
Adivarahan, Vinod [2 ]
Khan, Asif [1 ]
机构
[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA
[2] Nitek Inc, Irmo, SC 29063 USA
关键词
280; NM;
D O I
10.1143/APEX.4.012102
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on the room temperature electrical and optical characterization of a multichip light-emitting diode (LED) lamp with peak emission at 281 nm. Four pairs of micro-pixel LED arrays were connected in series to fabricate the lamp, which delivered a pulsed output power of 235 mW at 1.18 A (duty cycle similar to 0.5%), and attained a high external quantum efficiency of 4.63%. Under dc operation, the maximum power achieved by this lamp was similar to 20 mW at a drive current of 220 mA. The peak output power improved 1.62-fold after a thermoelectric cooler was added to the device packaging assembly. (C) 2011 The Japan Society of Applied Physics
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页数:3
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共 16 条
  • [1] 250 nm AlGaN light-emitting diodes
    Adivarahan, V
    Sun, WH
    Chitnis, A
    Shatalov, M
    Wu, S
    Maruska, HP
    Khan, MA
    [J]. APPLIED PHYSICS LETTERS, 2004, 85 (12) : 2175 - 2177
  • [2] High-power deep ultraviolet light-emitting diodes based on a micro-pixel design
    Adivarahan, V
    Wu, S
    Sun, WH
    Mandavilli, V
    Shatalov, MS
    Simin, G
    Yang, JW
    Maruska, HP
    Khan, MA
    [J]. APPLIED PHYSICS LETTERS, 2004, 85 (10) : 1838 - 1840
  • [3] Sub-milliwatt power III-N light emitting diodes at 285 nm
    Adivarahan, V
    Zhang, JP
    Chitnis, A
    Shuai, W
    Sun, J
    Pachipulusu, R
    Shatalov, M
    Khan, MA
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2002, 41 (4B): : L435 - L436
  • [4] Vertical Injection Thin Film Deep Ultraviolet Light Emitting Diodes with AlGaN Multiple-Quantum Wells Active Region
    Adivarahan, Vinod
    Heidari, Ahmad
    Zhang, Bin
    Fareed, Qhalid
    Islam, Monirul
    Hwang, Seongmo
    Balakrishnan, Krishnan
    Khan, Asif
    [J]. APPLIED PHYSICS EXPRESS, 2009, 2 (09)
  • [5] Self-heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nm
    Chitnis, A
    Sun, J
    Mandavilli, V
    Pachipulusu, R
    Wu, S
    Gaevski, M
    Adivarahan, V
    Zhang, JP
    Khan, MA
    Sarua, A
    Kuball, M
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (18) : 3491 - 3493
  • [6] Improvement in Output Power of 280-nm Deep Ultraviolet Light-Emitting Diode by Using AlGaN Multi Quantum Wells
    Fujioka, Akira
    Misaki, Takao
    Murayama, Takashi
    Narukawa, Yukio
    Mukai, Takashi
    [J]. APPLIED PHYSICS EXPRESS, 2010, 3 (04)
  • [7] Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer
    Hirayama, Hideki
    Tsukada, Yusuke
    Maeda, Tetsutoshi
    Kamata, Norihiko
    [J]. APPLIED PHYSICS EXPRESS, 2010, 3 (03)
  • [8] Laser diodes go green
    Khan, Asif
    [J]. NATURE PHOTONICS, 2009, 3 (08) : 432 - 434
  • [9] High-power 280 nm AlGaN light-emitting diodes based on an asymmetric single-quantum well
    Mayes, K
    Yasan, A
    McClintock, R
    Shiell, D
    Darvish, SR
    Kung, P
    Razeghi, M
    [J]. APPLIED PHYSICS LETTERS, 2004, 84 (07) : 1046 - 1048
  • [10] Unique optical properties of AlGaN alloys and related ultraviolet emitters
    Nam, KB
    Li, J
    Nakarmi, ML
    Lin, JY
    Jiang, HX
    [J]. APPLIED PHYSICS LETTERS, 2004, 84 (25) : 5264 - 5266