Temperature dependent quasi-static capacitance-voltage characterization of SiO2/β-Ga2O3 interface on different crystal orientations

The interface trap density (Dit) of the SiO2/beta-Ga2O3 interface in ((2) over bar 01), (010), and (001) orientations is obtained by the Hi-Lo method with the low frequency capacitance measured using the QuasiStatic Capacitance-Voltage (QSCV) technique. QSCV measurements are carried out at higher temperatures to increase the measured energy range of D-it in the bandgap. At room temperature, higher D-it is observed near the band edge for all three orientations. The measurement at higher temperatures led to an annealing effect that reduced the D-it value for all samples. Comparison with the conductance method and frequency dispersion of the capacitance suggests that the traps at the band edge are slow traps which respond to low frequency signals. Published by AIP Publishing.