A novel LDMOS with a junction field plate and a partial N-buried layer

被引：1

作者：

Shi Xian-Long ^{[1
]}

Luo Xiao-Rong ^{[1
,2
]}

Wei Jie ^{[1
]}

Tan Qiao ^{[1
]}

Liu Jian-Ping ^{[1
]}

Xu Qing ^{[1
]}

Li Peng-Cheng ^{[1
]}

Tian Rui-Chao ^{[1
]}

Ma Da ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

[2] Sci & Technol Analog Integrated Circuit Lab, Chongqing 400060, Peoples R China

来源：

CHINESE PHYSICS B | 2014年 / 23卷 / 12期

基金：

中国国家自然科学基金;

关键词：

junction field plate; partial N-buried layer; specific on-resistance; breakdown voltage; VOLTAGE;

D O I：

10.1088/1674-1056/23/12/127303

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A novel lateral double-diffused metal-oxide semiconductor (LDMOS) with a high breakdown voltage (BV) and low specific on-resistance (R-on.sp) is proposed and investigated by simulation. It features a junction field plate (JFP) over the drift region and a partial N-buried layer (PNB) in the P-substrate. The JFP not only smoothes the surface electric field (E-field), but also brings in charge compensation between the JFP and the N-drift region, which increases the doping concentration of the N-drift region. The PNB reshapes the equipotential contours, and thus reduces the E-field peak on the drain side and increases that on the source side. Moreover, the PNB extends the depletion width in the substrate by introducing an additional vertical diode, resulting in a significant improvement on the vertical BV. Compared with the conventional LDMOS with the same dimensional parameters, the novel LDMOS has an increase in BV value by 67.4%, and a reduction in R-on.sp by 45.7% simultaneously.

引用

页数：5

共 43 条

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