Low distortion and compact RF switch circuitry with the combination of PIN-diode and GaAs-FET for GSM quartet-band cellular phone

被引：0

作者：

Yamashita, T ^{[1
]}

Fukamachi, K ^{[1
]}

Kemmochi, S ^{[1
]}

机构：

[1] Hitachi Met Ltd, Adv Elect Res Lab, Kumagaya, Saitama 3600843, Japan

来源：

34TH EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, CONFERENCE PROCEEDINGS | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have newly developed the antenna switch module for GSM quartet-band (GSM850/EGSM/DCS/PCS) cellular phones. The developed module contains the function of one diplexer, two PIN-diode switches, two low-pass filters, two GaAs-FET switches and several matching circuitries on and in the LTCC substrate. PIN-diode switches, which were used as Tx-Rx path selector, could suppress the harmonies generation in transmitting mode. GaAs-FET switches, which were used as Rx path selector, could reduce the current consumption in receiving mode and make the module size smaller. All function were integrated into compact module size of 5.4x4.0x1.5mm.

引用

页码：733 / 736

页数：4

共 5 条

[1]

*3GPP TS 0505, 2001, V89200104

[2]

FUKAMACHI K, AS PAC MICR C 2003

[3] An antenna switch MMIC using E/D mode p-HEMT for GSM/DCS/PCS/WCDMA bands application [J].

Tosaka, H ;

Fujii, T ;

Miyakoshi, K ;

Ikenaka, K ;

Takahashi, M .

2003 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2003, :519-522

[4]

Watanabe T, 1999, IEEE MTT-S, P215, DOI 10.1109/MWSYM.1999.779460

[5] Polaris total Radio™, a highly integrated RF solution for GSM/GPRS and EDGE [J].

Wilkins, B .

2003 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2003, :383-386

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