Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film

被引：227

作者：

Huang, Sen ^{[1
]}

Jiang, Qimeng ^{[1
]}

Yang, Shu ^{[1
]}

Zhou, Chunhua ^{[1
]}

Chen, Kevin J. ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 04期

关键词：

AlGaN/GaN high-electron-mobility transistors (HEMTs); AlN; current collapse; dynamic_R-ON; passivation; plasma-enhanced atomic layer deposition (PEALD); FIELD-EFFECT TRANSISTORS; LAYER;

D O I：

10.1109/LED.2012.2185921

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An effective passivation technique for AlGaN/GaN high-electron-mobility transistors (HEMTs) is presented. This technique features an AlN thin film grown by plasma-enhanced atomic layer deposition (PEALD). With in situ remote plasma pretreatments prior to the AlN deposition, an atomically sharp interface between ALD-AlN and III-nitride has been obtained. Significant current collapse suppression and dynamic ON-resistance reduction are demonstrated in the ALD-AlN-passivated AlGaN/GaN HEMTs under high-drain-bias switching conditions.

引用

页码：516 / 518

页数：3

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