Fast-Switching GaN-Based Lateral Power Schottky Barrier Diodes With Low Onset Voltage and Strong Reverse Blocking

被引：163

作者：

Bahat-Treidel, E. ^{[1
]}

Hilt, Oliver ^{[1
]}

Zhytnytska, Rimma ^{[1
]}

Wentzel, Andreas ^{[1
]}

Meliani, Chafik ^{[1
]}

Wuerfl, Joachim ^{[1
]}

Traenkle, Guenther ^{[1
]}

机构：

[1] Ferdinand Braun Inst FBH, D-12489 Berlin, Germany

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 03期

关键词：

AlGaN/GaN Schottky diode; lateral Schottky diode; recessed Schottky diode;

D O I：

10.1109/LED.2011.2179281

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaN-based heterostructure lateral Schottky barrier diodes (SBDs) grown on n-SiC substrate are investigated in this letter. These SBDs own very low onset voltage V-F = 0.43 V, high reverse blocking V-BR > 1000 V, very low capacitive charge of 0.213 nC/A, and a very fast recovery time of 10 ps. These unique qualities are achieved by combining lateral topology, GaN:C back-barrier epitaxial structure, fully recessed Schottky anode (phi(B) = 0.43 eV), and slanted anode field plate in a robust and innovative process. Diode operation at elevated temperature up to 200 degrees C was also characterized.

引用

页码：357 / 359

页数：3

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