Field sensing characteristics of magnetic tunnel junctions with (001) MgO tunnel barrier

被引：33

作者：

Mazumdar, Dipanjan ^{[1
]}

Shen, Weifeng ^{[1
]}

Liu, Xiaoyong ^{[1
,2
]}

Schrag, B. D. ^{[1
,2
]}

Carter, Matthew ^{[1
,2
]}

Xiao, Gang ^{[1
]}

机构：

[1] Brown Univ, Dept Phys, Providence, RI 02912 USA

[2] Micro Magnetics Inc, Fall River, MA 02720 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 11期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2939265

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We map the magnetic field sensitivity and low-frequency 1/f voltage noise of high magnetoresistance MgO-based magnetic tunnel junctions in an orthogonal magnetic field arrangement. Large sensitivity values of over 1%/Oe are obtained only when a sufficiently large hard-axis bias field is applied. The low-frequency voltage noise is observed to scale with the field sensitivity. The magnetic field noise map reveals that the signal-to-noise ratios of these devices get gradually better at higher hard-axis bias fields. (C) 2008 American Institute of Physics.

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页数：3

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