Formation of Tensilely Strained Germanium-on-Insulator

被引：25

作者：

Hoshi, Yusuke ^{[1
]}

Sawano, Kentarou ^{[1
]}

Hamaya, Kohei ^{[2
,3
]}

Miyao, Masanobu ^{[2
]}

Shiraki, Yasuhiro ^{[1
]}

机构：

[1] Tokyo City Univ, Adv Res Lab, Res Ctr Silicon Nanosci, Setagaya Ku, Tokyo 1580082, Japan

[2] Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan

[3] Japan Sci & Technol Agcy, PRESTO, Chiyoda Ku, Tokyo 1020075, Japan

来源：

APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 01期

关键词：

GE; SI; MOBILITY; GROWTH;

D O I：

10.1143/APEX.5.015701

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricate a high-quality germanium-on-insulator (GOI) with tensile strain by combining the wafer bonding of a strained Ge grown on a Si substrate and an oxidized Si substrate and the selective etching of Si. The obtained 300-nm-thick strained GOI shows a smooth surface with RMS roughness of 0.15 nm and no dislocation is detected by cross-sectional transmission electron microscopy (XTEM). The tensile strain of 0.19% induced in the GOI is found to be maintained throughout the fabrication process. This suggests that the fabricated strained GOI has a high potential as an essential platform for high-performance electronic and optical devices. (C) 2012 The Japan Society of Applied Physics

引用

页数：3

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