Formation of Tensilely Strained Germanium-on-Insulator

被引：25

作者：

Hoshi, Yusuke ^{[1
]}

Sawano, Kentarou ^{[1
]}

Hamaya, Kohei ^{[2
,3
]}

Miyao, Masanobu ^{[2
]}

Shiraki, Yasuhiro ^{[1
]}

机构：

[1] Tokyo City Univ, Adv Res Lab, Res Ctr Silicon Nanosci, Setagaya Ku, Tokyo 1580082, Japan

[2] Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan

[3] Japan Sci & Technol Agcy, PRESTO, Chiyoda Ku, Tokyo 1020075, Japan

来源：

APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 01期

关键词：

GE; SI; MOBILITY; GROWTH;

D O I：

10.1143/APEX.5.015701

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricate a high-quality germanium-on-insulator (GOI) with tensile strain by combining the wafer bonding of a strained Ge grown on a Si substrate and an oxidized Si substrate and the selective etching of Si. The obtained 300-nm-thick strained GOI shows a smooth surface with RMS roughness of 0.15 nm and no dislocation is detected by cross-sectional transmission electron microscopy (XTEM). The tensile strain of 0.19% induced in the GOI is found to be maintained throughout the fabrication process. This suggests that the fabricated strained GOI has a high potential as an essential platform for high-performance electronic and optical devices. (C) 2012 The Japan Society of Applied Physics

引用

页数：3

共 19 条

[1] Germanium on sapphire by wafer bonding [J].

Baine, P. T. ;

Gamble, H. S. ;

Armstrong, B. M. ;

McNeill, D. W. ;

Mitchell, S. J. N. ;

Low, Y. H. ;

Rainey, P. V. .

SOLID-STATE ELECTRONICS, 2008, 52 (12) :1840-1844

[2]

Cheng Szu-Lin, 2009, Opt Express, V17, P10019

[3] Fabrication and characterisation of 200 mm germanium-on-insulator (GeOl) substrates made from bulk germanium [J].

Deguet, C. ;

Sanchez, L. ;

Akatsu, I. ;

Allibert, F. ;

Dechamp, J. ;

Madeira, F. ;

Mazen, F. ;

Tauzin, A. ;

Loup, V. ;

Richtarch, C. ;

Mercier, D. ;

Signamarcheix, T. ;

Letertre, F. ;

Depuydt, B. ;

Kernevez, N. .

ELECTRONICS LETTERS, 2006, 42 (07) :415-417

[4] LOW-TEMPERATURE GROWTH OF GE ON SI(100) [J].

EAGLESHAM, DJ ;

CERULLO, M .

APPLIED PHYSICS LETTERS, 1991, 58 (20) :2276-2278

[5] Band structure, deformation potentals, and carrier mobility in strained Si, Ge, and SiGe alloys [J].

Fischetti, MV ;

Laux, SE .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (04) :2234-2252

[6] DISLOCATION REDUCTION IN MBE-GROWN GE ON SI (001) BY INSITU THERMAL ANNEALING [J].

FUKUDA, Y ;

KOHAMA, Y ;

SEKI, M ;

OHMACHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (09) :L1591-L1593

[7] Strain state and thermal stability of strained-Si-on-insulator substrates [J].

Hoshi, Yusuke ;

Fukumoto, Atsushi ;

Sawano, Kentarou ;

Cayrefourcq, Ian ;

Yoshim, Makoto ;

Shiraki, Yasuhiro .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (11) :7294-7296

[8] Chemical Mechanical Polishing of Epitaxial Germanium on SiO2-patterned Si(001) Substrates [J].

Hydrick, J. M. ;

Park, J. S. ;

Bai, J. ;

Major, C. ;

Curtin, M. ;

Fiorenza, J. G. ;

Carroll, M. ;

Lochtefeld, A. .

SIGE, GE, AND RELATED COMPOUNDS 3: MATERIALS, PROCESSING, AND DEVICES, 2008, 16 (10) :237-248

[9] Strain-induced band gap shrinkage in Ge grown on Si substrate [J].

Ishikawa, Y ;

Wada, K ;

Cannon, DD ;

Liu, JF ;

Luan, HC ;

Kimerling, LC .

APPLIED PHYSICS LETTERS, 2003, 82 (13) :2044-2046

[10]

Kurdi M E, 2009, APPL PHYS LETT, V94

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