Annealing effect on 0.5Pb(Ni1/3Nb2/3)O3-0.5Pb(Zr0.3Ti0.7)O3 thick film deposited by aerosol deposition method

被引:7
作者
Kawakami, Y
Aisawa, S
Akedo, J
机构
[1] NEC TOKIN Corp, Res & Dev Unit, Taihaku Ku, Sendai, Miyagi 9808510, Japan
[2] AIST, Tsukuba, Ibaraki 3058564, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 9B期
关键词
aerosol deposition; relaxor ferroelectric; PNN-PZT; annealing; piezoelectric constant;
D O I
10.1143/JJAP.44.6934
中图分类号
O59 [应用物理学];
学科分类号
摘要
The aerosol deposition method (ADM) is the unique thick film technology based on consolidification by impacting powder particles on a substrate. We prepared a powder of a relaxor ferroelectric material with the composition 0.5Pb(Ni1/3Nb2/3)O-3-0.5Pb(Zr0.3Ti0.7)O-3 (PNN-PZT) using a solid state reaction process. A PNN-PZT film 10 mu m thick was deposited on a YSZ (3 mol% Y2O3-stabilized ZrO2) substrate at room temperature by ADM. The prepared films were annealed from 600 to 900 degrees C to investigate the annealing effect. The PNN-PZT film showed a pure perovskite phase without pyrochlore. As a result of transmission electron microscope (TEM) observation, the mean grain sizes of films annealed at 600 and 850 degrees C were measured to be 83 and 254 nm, respectively. After annealing at 850 degrees C, the values of the piezoelectric constant d(31) and the dielectric constant at 1 kHz of the PNN-PZT film were measured to be -164 pm/V and 2530, respectively.
引用
收藏
页码:6934 / 6937
页数:4
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