High-Temperature Characterization of Multiple Silicon-Based Substrate for RF-IC Applications

被引：0

作者：

Courte, Q. ^{[1
]}

Rack, M. ^{[1
]}

Nabet, M. ^{[1
]}

Cardinael, P. ^{[1
]}

Raskin, J-P ^{[1
]}

机构：

[1] Catholic Univ Louvain, ICTEAM, ELEN, B-1348 Louvain La Neuve, Belgium

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2022年 / 10卷

关键词：

Substrates; Conductivity; Silicon; Radio frequency; Coplanar waveguides; Loss measurement; Permittivity measurement; Silicon-on-Insulator (SOI) technology; effective resistivity; trap-rich (TR) substrate; Parasitic Surface Conduction (PSC); RF characterization; RF substrate; harmonic distortion (HD); gold-doped silicon substrate (Au-Si); high temperature; RESISTIVITY; PERFORMANCE;

D O I：

10.1109/JEDS.2022.3188893

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper focuses on the comparison of various advanced substrates such as trap-rich (TR), porous silicon (PSi), gold-doped (Au-Si) and smart-implants PN-junction (DP) in terms of RF performances. Both small- and large-signal measurements were performed, including the study of the influence of temperature and DC bias voltage. The purpose of this paper is to provide an overview, and a more in-depth analysis of DP substrate, of the characteristics of these multiple substrates to facilitate design choices for RF-IC applications.

引用

页码：620 / 626

页数：7

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