High-Temperature Characterization of Multiple Silicon-Based Substrate for RF-IC Applications

被引：0

作者：

Courte, Q. ^{[1
]}

Rack, M. ^{[1
]}

Nabet, M. ^{[1
]}

Cardinael, P. ^{[1
]}

Raskin, J-P ^{[1
]}

机构：

[1] Catholic Univ Louvain, ICTEAM, ELEN, B-1348 Louvain La Neuve, Belgium

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2022年 / 10卷

关键词：

Substrates; Conductivity; Silicon; Radio frequency; Coplanar waveguides; Loss measurement; Permittivity measurement; Silicon-on-Insulator (SOI) technology; effective resistivity; trap-rich (TR) substrate; Parasitic Surface Conduction (PSC); RF characterization; RF substrate; harmonic distortion (HD); gold-doped silicon substrate (Au-Si); high temperature; RESISTIVITY; PERFORMANCE;

D O I：

10.1109/JEDS.2022.3188893

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper focuses on the comparison of various advanced substrates such as trap-rich (TR), porous silicon (PSi), gold-doped (Au-Si) and smart-implants PN-junction (DP) in terms of RF performances. Both small- and large-signal measurements were performed, including the study of the influence of temperature and DC bias voltage. The purpose of this paper is to provide an overview, and a more in-depth analysis of DP substrate, of the characteristics of these multiple substrates to facilitate design choices for RF-IC applications.

引用

页码：620 / 626

页数：7

共 50 条

[21] High-temperature RF probe station for device characterization through 500°C and 50 GHz [J].

Schwartz, ZD ;

Downey, AN ;

Alterovitz, SA ;

Ponchak, GE .

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 2005, 54 (01) :369-376

[22] High-Temperature RF Material Characterization Using a Dual-Chambered Rectangular Waveguide Fixture [J].

Bogle, Andrew E. ;

Hyde, Milo W. ;

Havrilla, Michael J. ;

Sovern, Jeffrey S. .

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 2017, 66 (09) :2422-2427

[23] Design of Metamaterial High-Temperature Pressure Sensor Based on HTCC Ceramic Substrate [J].

Guo, Wei ;

Lu, Yan-Chi ;

Gao, Beile ;

Qiao, Yi ;

Wu, Dongyang ;

Feng, Rui ;

Tan, Qiulin .

IEEE SENSORS JOURNAL, 2025, 25 (07) :11176-11184

[24] Editorial: Advanced Corrosion Wear Resistant Alloys and their Characterization for High-Temperature Applications [J].

Xu Liujie ;

Ma Shengqiang ;

Fu Hanguang .

FRONTIERS IN MATERIALS, 2020, 7 (07)

[25] Intensive Study of Field-Plated AlGaN/GaN HEMT on Silicon Substrate for High Power RF Applications [J].

Kumar, J. S. Raj ;

Nirmal, D. ;

Hooda, Manish Kumar ;

Singh, Surinder ;

Ajayan, J. ;

Arivazhagan, L. .

SILICON, 2022, 14 (08) :4277-4282

[26] Development and characterization of resonator- and delay lines-based sensors on AlN/sapphire substrate for high-temperature application [J].

Liu, Jie ;

Yang, Bin ;

Liu, Jingquan ;

Chen, Xiang ;

Wang, Xiaolin ;

Yang, Chunsheng .

JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, 2016, 15 (04)

[27] Flip-Chip Bonding of SiC Chips onto Alumina Substrate for High-Temperature Applications [J].

Li, Feng ;

Lamsal, Buddhi S. ;

Shi, Jiaqi .

2024 IEEE WORKSHOP ON MICROELECTRONICS AND ELECTRON DEVICES, WMED, 2024, :1-4

[28] High-Temperature Corrosion of HVAF-Sprayed Ni-Based Coatings for Boiler Applications [J].

Eklund, J. ;

Phother, J. ;

Sadeghi, E. ;

Joshi, S. ;

Liske, J. .

OXIDATION OF METALS, 2019, 91 (5-6) :729-747

[29] Water-Glass-Based Thermal Paste for High-Temperature Applications [J].

Shishkin, R. A. ;

Erkhova, N. A. ;

Beketov, A. R. ;

Elagin, A. A. .

JOURNAL OF CERAMIC SCIENCE AND TECHNOLOGY, 2014, 5 (03) :199-202

[30] Wirebonding Based 3-D SiC IC Stacks for High Temperature Applications [J].

Li, Feng ;

Raveendran, Srividya .

IEEE 72ND ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC 2022), 2022, :2023-2027

← 1 2 3 4 5 →