High-Temperature Characterization of Multiple Silicon-Based Substrate for RF-IC Applications

被引：0
|
作者：
Courte, Q. [1 ]
Rack, M. [1 ]
Nabet, M. [1 ]
Cardinael, P. [1 ]
Raskin, J-P [1 ]
机构：
[1] Catholic Univ Louvain, ICTEAM, ELEN, B-1348 Louvain La Neuve, Belgium
来源：
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2022年 / 10卷
关键词：
Substrates; Conductivity; Silicon; Radio frequency; Coplanar waveguides; Loss measurement; Permittivity measurement; Silicon-on-Insulator (SOI) technology; effective resistivity; trap-rich (TR) substrate; Parasitic Surface Conduction (PSC); RF characterization; RF substrate; harmonic distortion (HD); gold-doped silicon substrate (Au-Si); high temperature; RESISTIVITY; PERFORMANCE;
D O I：
10.1109/JEDS.2022.3188893
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper focuses on the comparison of various advanced substrates such as trap-rich (TR), porous silicon (PSi), gold-doped (Au-Si) and smart-implants PN-junction (DP) in terms of RF performances. Both small- and large-signal measurements were performed, including the study of the influence of temperature and DC bias voltage. The purpose of this paper is to provide an overview, and a more in-depth analysis of DP substrate, of the characteristics of these multiple substrates to facilitate design choices for RF-IC applications.
引用
收藏
页码：620 / 626
页数：7
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