Superconducting MgB2 film prepared by chemical vapor deposition at atmospheric pressure of N2

被引：5

作者：

Zhang, Song ^{[1
]}

Deng, Chao-Yong ^{[1
]}

Wang, Xu ^{[1
]}

Wu, Yan-Ping ^{[1
]}

Fu, Yao ^{[1
]}

Fu, Xing-Hua ^{[1
]}

机构：

[1] Guizhou Univ, Dept Elect Sci & Technol, Guiyang 550025, Guizhou, Peoples R China

来源：

THIN SOLID FILMS | 2015年 / 584卷

关键词：

Magnesium diboride; Thin films; Chemical vapor deposition; Atmospheric pressure; Carrier gas; THIN-FILMS; DENSITY;

D O I：

10.1016/j.tsf.2015.02.005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A simple and effective chemical vapor deposition equipment was developed for deposition of superconducting MgB2 thin films. The pure precursor Boron films were prepared in base pressure of low vacuum and deposited in atmospheric pressure. After the precursor film annealed in Mg vapor, the superconducting MgB2 film was fabricated. During the precursor Boron films preparation, N-2 and Ar were used as carrier gas. Compared to Ar gas, the films show better crystallization, surface morphology and superconducting performance when N-2 is adopted as carrier gas. With flow rate of 200 sccm of N-2 gas, the fabricated MgB2 films exhibit the highest superconducting transition temperature of 39.5 K, which is among the best results of MgB2 thin films. This method provides a suitable method to realize high quality MgB2 Josephson junctions and industrial manufacture of MgB2 superconducting thin films on a large scale. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：300 / 304

页数：5

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