Atom probe tomography of nanoscale architectures in functional materials for electronic and photonic applications

被引:8
作者
Chang, Alexander S. [1 ]
Lauhon, Lincoln J. [1 ]
机构
[1] Northwestern Univ, Dept Mat Sci & Engn, 2220 Campus Dr, Evanston, IL 60208 USA
基金
美国国家科学基金会;
关键词
Atom probe tomography; Semiconductors; Nanomaterials; Heterostructures; Nanowires; Quantum dots; MULTIPLE-QUANTUM WELLS; CORE-SHELL; SEMICONDUCTOR NANOWIRES; SILICON NANOWIRES; DOPANT DISTRIBUTIONS; SPECIMEN PREPARATION; LOCAL MAGNIFICATION; CATALYST ATOMS; SI; SCALE;
D O I
10.1016/j.cossms.2018.09.002
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Microscopy has played a central role in the advancement of nanoscience and nanotechnology by enabling the direct visualization of nanoscale structure, leading to predictive models of novel physical behaviors. Electronic and photonic device technologies, whose features and performance are often improved through miniaturization, have particularly benefited from new capabilities in the characterization of material structure and composition. This paper reviews recent applications of atom probe tomography to semiconducting materials with nanoscale architectures that are designed to impart novel properties and device functionality by virtue of their shape and size. A review is necessary because rapid advances in atom probe instrumentation and analysis in the last decade have greatly expanded the utility of atom probe tomography to address scientific questions and technical questions in this area. The paper is organized in terms of the surface topologies of nanoscale architectures. We begin with nominally planar interfaces including thin film heterostructures and superlattices with open surfaces. Distinctive capabilities in the analysis of interfaces are introduced, as are challenges arising from measurement artifacts. We then discuss nanowires and nanowire heterostructures with surfaces that are closed along one dimension, for which atom probe tomography has provided unique and important understandings on the doping processes. Finally, we consider nanocrystals and quantum dots with completely closed surfaces. Along the way, current challenges and opportunities for atom probe tomography are highlighted, and the reader is directed to complementary reviews of more technical aspects of atom probe analysis.
引用
收藏
页码:171 / 187
页数:17
相关论文
共 168 条
[41]   New approaches to nanoparticle sample fabrication for atom probe tomography [J].
Felfer, P. ;
Li, T. ;
Eder, K. ;
Galinski, H. ;
Magyar, A. P. ;
Bell, D. C. ;
Smith, G. D. W. ;
Kruse, N. ;
Ringer, S. P. ;
Cairney, J. M. .
ULTRAMICROSCOPY, 2015, 159 :413-419
[42]   Characterization of electrical properties in axial Si-Ge nanowire heterojunctions using off-axis electron holography and atom-probe tomography [J].
Gan, Zhaofeng ;
Perea, Daniel E. ;
Yoo, Jinkyoung ;
He, Yang ;
Colby, Robert J. ;
Barker, Josh E. ;
Gu, Meng ;
Mao, Scott X. ;
Wang, Chongmin ;
Picraux, S. T. ;
Smith, David J. ;
McCartney, Martha R. .
JOURNAL OF APPLIED PHYSICS, 2016, 120 (10)
[43]   Nanowire Solar Cells [J].
Garnett, Erik C. ;
Brongersma, Mark L. ;
Cui, Yi ;
McGehee, Michael D. .
ANNUAL REVIEW OF MATERIALS RESEARCH, VOL 41, 2011, 41 :269-295
[44]   Design of a femtosecond laser assisted tomographic atom probe [J].
Gault, B ;
Vurpillot, F ;
Vella, A ;
Gilbert, M ;
Menand, A ;
Blavette, D ;
Deconihout, B .
REVIEW OF SCIENTIFIC INSTRUMENTS, 2006, 77 (04)
[45]   High-resolution nanostructural investigation of Zn4Sb3 alloys [J].
Gault, Baptiste ;
Marquis, Emmanuelle A. ;
Saxey, David W. ;
Hughes, Gareth M. ;
Mangelinck, Dominique ;
Toberer, Eric S. ;
Snyder, G. Jeff .
SCRIPTA MATERIALIA, 2010, 63 (07) :784-787
[46]   Composition profiling of InAs quantum dots and wetting layers by atom probe tomography and cross-sectional scanning tunneling microscopy [J].
Giddings, A. D. ;
Keizer, J. G. ;
Hara, M. ;
Hamhuis, G. J. ;
Yuasa, H. ;
Fukuzawa, H. ;
Koenraad, P. M. .
PHYSICAL REVIEW B, 2011, 83 (20)
[47]   Nanoscale Microstructural and Chemical Analysis of SiO2-Zn1-xAlxO Nanocomposites: Towards a Better Understanding of Si and Al Substitution in ZnO [J].
Gilbert, Matthieu ;
Byl, Celine ;
Berardan, David ;
Gloter, Alexandre ;
Dragoe, Nita ;
Vurpillot, Francois .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2015, 98 (12) :3948-3955
[48]   3D analysis of advanced nano-devices using electron and atom probe tomography [J].
Grenier, A. ;
Duguay, S. ;
Barnes, J. P. ;
Serra, R. ;
Haberfehlner, G. ;
Cooper, D. ;
Bertin, F. ;
Barraud, S. ;
Audoit, G. ;
Arnoldi, L. ;
Cadel, E. ;
Chabli, A. ;
Vurpillot, F. .
ULTRAMICROSCOPY, 2014, 136 :185-192
[49]   Simultaneous Quantification of Indium and Nitrogen Concentration in InGaNAs Using HAADF-STEM [J].
Grieb, Tim ;
Mueller, Knut ;
Cadel, Emmanuel ;
Beyer, Andreas ;
Schowalter, Marco ;
Talbot, Etienne ;
Volz, Kerstin ;
Rosenauer, Andreas .
MICROSCOPY AND MICROANALYSIS, 2014, 20 (06) :1740-1752
[50]   Composition Fluctuation of In and Well-Width Fluctuation in InGaN/GaN Multiple Quantum Wells in Light-Emitting Diode Devices [J].
Gu, Gil Ho ;
Jang, Dong Hyun ;
Nam, Ki Bum ;
Park, Chan Gyung .
MICROSCOPY AND MICROANALYSIS, 2013, 19 :99-104