Origin of the excitonic recombinations in hexagonal boron nitride by spatially resolved cathodoluminescence spectroscopy

被引：92

作者：

Jaffrennou, P. ^{[1
,2
,3
]}

Barjon, J. ^{[4
]}

Lauret, J. -S. ^{[3
]}

Attal-Tretout, B. ^{[2
]}

Ducastelle, F. ^{[1
]}

Loiseau, A. ^{[1
]}

机构：

[1] Off Natl Etud & Rech Aerosp, CNRS, Lab Etude Microstruct, F-92322 Chatillon, France

[2] Chemin Hunier, Off Natl Etud & Rech Aerosp, Dept Mesures Phys, F-91761 Palaiseau, France

[3] Ecole Normale Super, Inst Dalembert, Lab Photon Quant & Mol, F-94235 Cachan, France

[4] Univ Versailles, CNRS, Grp Etude Mat Condensee, F-92195 Meudon, France

来源：

JOURNAL OF APPLIED PHYSICS | 2007年 / 102卷 / 11期

关键词：

D O I：

10.1063/1.2821413

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The excitonic recombinations in hexagonal boron nitride (hBN) are investigated with spatially resolved cathodoluminescence spectroscopy in the ultraviolet range. Cathodoluminescence images of an individual hBN crystallite reveals that the 215 nm free excitonic line is quite homogeneously emitted along the crystallite, whereas the 220 and 227 nm excitonic emissions are located in specific regions of the crystallite. Transmission electron microscopy images show that these regions contain a high density of crystalline defects. This suggests that the 220 and 227 nm emissions are both produced by the recombination of excitons trapped at structural defects. (C) 2007 American Institute of Physics.

引用

页数：3

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