Ge:Ga far-infrared photoconductor 2D direct hybrid array

被引：9

作者：

Hiromoto, N ^{[1
]}

Fujiwara, M ^{[1
]}

Shibai, H ^{[1
]}

Hirao, T ^{[1
]}

Nakagawa, T ^{[1
]}

Kawada, M ^{[1
]}

机构：

[1] Commun Res Lab, Tokyo 1848795, Japan

来源：

INFRARED ASTRONOMICAL INSTRUMENTATION, PTS 1-2 | 1998年 / 3354卷

关键词：

Ge : Ga photoconductor; far-infrared; two-dimensional array; direct hybrid; indium bump; pMOS readout circuit;

D O I：

10.1117/12.317304

中图分类号：

P1 [天文学];

学科分类号：

0704 ;

摘要：

Ge:Ga far-infrared photoconductor two-dimensional (2D) direct hybrid arrays are being developed for application in the focal-plane detectors of the Far Infrared Surveyor (FIS), one of the two main instruments of the Infrared Imaging Surveyor (IRIS) satellite. The arrays are composed of Ge:Ga photoconductor arrays fabricated on one chip, Si-pMOS readout integrated circuits, and a hybridization of them done by using indium bump technology.

引用

页码：48 / 56

页数：9