Diameter-dependent composition of vapor-liquid-solid grown Si1-xGex nanowires

被引：52

作者：

Zhang, Xi ^{[1
]}

Lew, Kok-Keong ^{[1
]}

Nimmatoori, Pramod ^{[1
]}

Redwing, Joan M. ^{[1
]}

Dickey, Elizabeth C. ^{[1
]}

机构：

[1] Penn State Univ, Mat Res Inst, Dept Mat Sci & Engn, University Pk, PA 16802 USA

来源：

NANO LETTERS | 2007年 / 7卷 / 10期

关键词：

D O I：

10.1021/nl071132u

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Diameter-dependent compositions of Si-1-Ge-x(x) nanowires grown by a vapor-liquid-solid mechanism using SiH4 and GeH4 precursors are studied by transmission electron microscopy and X-ray energy dispersive spectroscopy. For the growth conditions studied, the Ge concentration in Si-1-Ge-x(x) nanowires shows a strong dependence on nanowire diameter, with the Ge concentration decreasing with decreasing nanowire diameter below similar to 50 nm. The size-dependent nature of Ge concentration in Si-1-Ge-x(x) NWs is strongly suggestive of Gibbs-Thomson effects and highlights another important phenomenon in nanowire growth.

引用

页码：3241 / 3245

页数：5

共 21 条

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