Preliminary investigation of SiC on silicon for biomedical applications

被引:11
作者
Carter, GE [1 ]
Casady, JB
Bonds, J
Okhuysen, ME
Scofield, JD
Saddow, SE
机构
[1] Mississippi State Univ, Dept Elect & Comp Engn, Emerging Mat Res Lab, Mississippi State, MS 39762 USA
[2] USAF, Res Lab, Wright Patterson AFB, OH 45433 USA
来源
SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷
关键词
3C; biomedical probe; MEMS; microelectromechanical; reactive ion etching; RIE; SF6;
D O I
10.4028/www.scientific.net/MSF.338-342.1149
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Reactive ion etching experiments were conducted with the intent of constructing a 3C-SiC on silicon heart probe to be used for biomedical applications. Experiments were performed with 3C-SiC as well as 4H-SiC in order to optimize the process for the heart probe construction. The heart probes were patterned on 3C-SiC on silicon to create a hybrid device that would combine the strength and inertness of the 3C-SiC material with the electronic compatibility of Si material to provide a complete probe suitable for reliable and disposable use required by the medical industry.
引用
收藏
页码:1149 / 1152
页数:4
相关论文
共 11 条
[1]   Etching of 6H-SiC and 4H-SiC using NF3 in a reactive ion etching system [J].
Casady, JB ;
Luckowski, ED ;
Bozack, M ;
Sheridan, D ;
Johnson, RW ;
Williams, JR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1996, 143 (05) :1750-1753
[2]   Spatial uniformity of the mechanical properties of 3C-SiC films grown on 4-inch Si wafers as a function of film growth conditions [J].
Chandra, K ;
Zorman, CA ;
Mehregany, M .
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 :635-638
[3]  
Hong LS, 1996, INST PHYS CONF SER, V142, P93
[4]   RIGID AND FLEXIBLE THIN-FILM MULTIELECTRODE ARRAYS FOR TRANSMURAL CARDIAC RECORDING [J].
MASTROTOTARO, JJ ;
MASSOUD, HZ ;
PILKINGTON, TC ;
IDEKER, RE .
IEEE TRANSACTIONS ON BIOMEDICAL ENGINEERING, 1992, 39 (03) :271-279
[5]  
Moller H, 1996, INST PHYS CONF SER, V142, P497
[6]  
OKHUYSEN ME, 1998, MAT RES SOC
[7]   REACTIVE ION ETCHING OF MONOCRYSTALLINE, POLYCRYSTALLINE, AND AMORPHOUS-SILICON CARBIDE IN CF4/O2 MIXTURES [J].
PADIYATH, R ;
WRIGHT, RL ;
CHAUDHRY, MI ;
BABU, SV .
APPLIED PHYSICS LETTERS, 1991, 58 (10) :1053-1055
[8]   Deformation of monocrystalline 6H-SiC [J].
Samant, AV ;
Zhou, WL ;
Pirouz, P .
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 :627-630
[9]  
SCOFIELD JD, 1998, APPL PHYS LETT 0706
[10]  
Yih PH, 1997, PHYS STATUS SOLIDI B, V202, P605, DOI 10.1002/1521-3951(199707)202:1<605::AID-PSSB605>3.0.CO