Residual layer self-removal in imprint lithography

被引：16

作者：

Dumond, Jarrett ^{[1
]}

Low, Hong Yee ^{[1
]}

机构：

[1] Inst Mat Res & Engn, Singapore 117602, Singapore

来源：

ADVANCED MATERIALS | 2008年 / 20卷 / 07期

关键词：

D O I：

10.1002/adma.200701659

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A new method for imprinting residual-layer free polymer micro- and nano structures, particularly 3-D structures with overhang, is demonstrated. This simple and versatile method induces self-removal of the residual layer by controlled failure of the patterned film along the edges of the imprinted features. Pristine overhang structures down to similar to 500 nm diameter are realized without exposure to plasma or chemical etchants.

引用

页码：1291 / +

页数：8

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