Low-noise avalanche photodiode in standard 0.35-μm CMOS technology

被引：31
|
作者：
Pancheri, Lucio [1 ,2 ]
Scandiuzzo, Mauro [2 ]
Stoppa, David [2 ]
Betta, Gian-Franco Dalla [1 ]
机构：
[1] Univ Trent, Dept Informat & Commun Technol, I-38050 Trento, Italy
[2] FBK Irst, I-38050 Trento, Italy
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2008年 / 55卷 / 01期
关键词：
avalanche photodiodes (APDs); CMOS; shot noise;
D O I：
10.1109/TED.2007.910570
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we report on an Avalanche Photodiode (APD) fabricated in a standard 0.35-mu m CMOS technology. The main electrooptical characteristics of the device are presented, showing a remarkably low-noise factor if compared to other CMOS APDs. An estimation of the noise properties of a pixel based on the proposed photodiode with charge-amplifier readout is performed, showing that it could have an improved noise performance with respect to a standard photodiode-based pixel.
引用
收藏
页码：457 / 461
页数：5
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