Energy band engineering and controlled p-type conductivity of CuAlO2 thin films by nonisovalent Cu-O alloying

被引：49

作者：

Yao, Z. Q. ^{[1
,2
,3
]}

He, B. ^{[1
,2
]}

Zhang, L. ^{[3
]}

Zhuang, C. Q. ^{[3
]}

Ng, T. W. ^{[1
,2
]}

Liu, S. L. ^{[4
]}

Vogel, M. ^{[3
]}

Kumar, A. ^{[3
]}

Zhang, W. J. ^{[1
,2
]}

Lee, C. S. ^{[1
,2
]}

Lee, S. T. ^{[1
,2
]}

Jiang, X. ^{[3
]}

机构：

[1] City Univ Hong Kong, Ctr Super Diamond & Adv Films COSDAF, Hong Kong, Hong Kong, Peoples R China

[2] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China

[3] Univ Siegen, Inst Mat Engn, D-57076 Siegen, Germany

[4] Sichuan Univ, Analyt & Testing Ctr, Chengdu 610064, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 06期

关键词：

copper compounds; electrical conductivity; energy gap; Hall effect; hole mobility; semiconductor thin films; valence bands; wide band gap semiconductors;

D O I：

10.1063/1.3683499

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electronic band structure and p-type conductivity of CuAlO2 films were modified via synergistic effects of energy band offset and partial substitution of less-dispersive Cu+ 3d(10) with Cu2+ 3d(9) orbitals in the valence band maximum by alloying nonisovalent Cu-O with CuAlO2 host. The Cu-O/CuAlO2 alloying films show excellent electronic properties with tunable wide direct bandgaps (similar to 3.46-3.87 eV); Hall measurements verify the highest hole mobilities (similar to 11.3-39.5 cm(2)/Vs) achieved thus far for CuAlO2 thin films and crystals. Top-gate thin film transistors constructed on p-CuAlO2 films were presented, and the devices showed pronounced performance with I-on/I-off of similar to 8.0 x 10(2) and field effect mobility of 0.97 cm(2)/Vs. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3683499]

引用

页数：4

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