Spin Hall magnetoresistance in Co2FeSi/Pt thin films: dependence on Pt thickness and temperature

被引：7

作者：

Huang, Xiufeng ^{[1
]}

Dai, Zhiwen ^{[1
]}

Huang, Lin ^{[2
]}

Lu, Guangduo ^{[1
]}

Liu, Min ^{[1
]}

Piao, Hongguang ^{[1
,2
]}

Kim, Dong-Hyun ^{[2
]}

Yu, Seong-cho ^{[2
]}

Pan, Liqing ^{[1
]}

机构：

[1] China Three Gorges Univ, Coll Sci, Yichang 443002, Hubei, Peoples R China

[2] Chungbuk Natl Univ, Coll Nat Sci, Dept Phys, Cheongju 28644, Chungbuk, South Korea

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2016年 / 28卷 / 47期

基金：

中国国家自然科学基金;

关键词：

spintronics; spin current; spin Hall magnetoresistance; spin Hall effect;

D O I：

10.1088/0953-8984/28/47/476006

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have investigated the temperature and the Pt layer thickness dependence of the magnetoresistances (MRs) in Co2FeSi/Pt thin films. Based on the field dependent measurements, it can be seen that the spin-current-induced spin Hall magnetoresistance (SMR) plays the dominant role in the MRs in the Co2FeSi/Pt bilayers in the whole temperature range. Meanwhile, a quite small part of anisotropic magnetoresistance (AMR) existed in the MRs. It proved to be originated from magnetic proximity effect (MPE) by measuring the Pt thickness and temperature dependence of the AMR. Moreover, the Co2FeSi layer thickness has much weaker effect on the SMR and AMR compared to the Pt layer thickness. These results indicate that the Co2FeSi/Pt interface is beneficial to be used in the spin-current-induced physical phenomena.

引用

页数：6

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