Quantum confinement of excitons in dendrite-like GaN nanowires

被引：12

作者：

Ghosh, R ^{[1
]}

Basak, D ^{[1
]}

机构：

[1] Indian Assoc Cultivat Sci, Dept Solid State Phys, Kolkata 700032, W Bengal, India

来源：

JOURNAL OF APPLIED PHYSICS | 2005年 / 98卷 / 08期

关键词：

D O I：

10.1063/1.2084334

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Dendrite-like GaN nanowires have been grown by direct reaction of gallium metal with ammonia without any catalyst in a simple grinding-mediated two-step process, the second step being annealing of the as-synthesized GaN powder at 800 degrees C. The samples have been characterized by x-ray diffractometry, transmission electron microscopy (TEM), and photoluminescence (PL). TEM results show that many of the synthesized nanowires are of diameters less than the Bohr exciton radius of GaN. A large blue shift of the excitonic peak in the photoluminescence (PL) spectra indicates quantum confinement of the carriers. These results are significant for the growth of dendrite-like GaN nanowires with a small aspect ratio.

引用

页数：3

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