Quantum confinement of excitons in dendrite-like GaN nanowires

被引:12
作者
Ghosh, R [1 ]
Basak, D [1 ]
机构
[1] Indian Assoc Cultivat Sci, Dept Solid State Phys, Kolkata 700032, W Bengal, India
关键词
D O I
10.1063/1.2084334
中图分类号
O59 [应用物理学];
学科分类号
摘要
Dendrite-like GaN nanowires have been grown by direct reaction of gallium metal with ammonia without any catalyst in a simple grinding-mediated two-step process, the second step being annealing of the as-synthesized GaN powder at 800 degrees C. The samples have been characterized by x-ray diffractometry, transmission electron microscopy (TEM), and photoluminescence (PL). TEM results show that many of the synthesized nanowires are of diameters less than the Bohr exciton radius of GaN. A large blue shift of the excitonic peak in the photoluminescence (PL) spectra indicates quantum confinement of the carriers. These results are significant for the growth of dendrite-like GaN nanowires with a small aspect ratio.
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页数:3
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