Modeling the Electrothermal Stability of Power MOSFETs During Switching Transients

被引：9

作者：

Alatise, Olayiwola ^{[1
]}

Parker-Allotey, Nii-Adotei ^{[1
]}

Mawby, Phil ^{[1
]}

机构：

[1] Univ Warwick, Sch Engn, Coventry CV34 6QT, W Midlands, England

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 07期

关键词：

Power MOSFETs; thermal runaway; TEMPERATURE;

D O I：

10.1109/LED.2012.2196671

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter investigates the electrothermal stability of MOSFETs during switching transients. Switch-mode MOSFETs, when transiting between the opposite ends of the load line, pass through bias conditions with high thermal runaway probability, i.e., R-TH . V-DS . dI(DS)/dT > 1. It is shown here that the likelihood of thermal runaway increases when dI(DS)/dT is positive and the switching duration is greater than the thermal time constant. This condition is worse for advanced MOSFETs with high transconductance because the zero-temperature-crossover point occurs at higher drain currents. This letter uses a physically calibrated MOSFET model for detailed analysis of the electrothermal dynamics during switching transients.

引用

页码：1039 / 1041

页数：3

共 11 条

[1] The Impact of Repetitive Unclamped Inductive Switching on the Electrical Parameters of Low-Voltage Trench Power nMOSFETs [J].