Interband optical properties of silicon [001] quantum wells using a two-conduction-band k • p model

被引：5

作者：

Michelini, Fabienne ^{[1
]}

Ouerghi, Issam ^{[1
]}

机构：

[1] Aix Marseille Univ, CNRS, UMR 6242, IM2NP, F-13397 Marseille, France

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 22期

关键词：

conduction bands; elemental semiconductors; k; p calculations; photoluminescence; semiconductor quantum wells; semiconductor thin films; semiconductor-insulator boundaries; silicon; silicon compounds; ELECTRONS; HOLES;

D O I：

10.1063/1.3663974

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using analytical k center dot p calculations, we are able to describe the zone-center interband optical properties of Si [001] quantum wells in agreement with first principle calculations. Within the k center dot p band formalism, we understand how the sp*-like character of the conduction band minimum determines a total anisotropy of the polarization. Similarly, its indirect gap nature generates atomic-scale oscillations of the optical matrix elements, which suggests a giant variability of the absorption. Our results are also in agreement with photoluminescence experiments on ultrathin Si/SiO2 films. (C) 2011 American Institute of Physics. [doi:10.1063/1.3663974]

引用

页数：3