Structural properties and resistance-switching behavior of thermally grown NiO thin films

被引：10
作者：
Kim, Dong-Wook [1 ]
Jung, Ranju [2 ]
Park, Bae Ho [3 ]
Li, Xiang-Shu [2 ]
Park, Chanwoo [1 ]
Shin, Seongmo [1 ]
Kim, Dong-Chirl [2 ]
Lee, Chang Won [2 ]
Se, Sunae [2 ]
机构：
[1] Hanyang Univ, Dept Appl Phys, Ansan 426791, South Korea
[2] Samsung Adv Inst Technol, Suwon 440600, Kyeonggi, South Korea
[3] Konkuk Univ, Dept Phys, Seoul 143701, South Korea
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 03期
关键词：
NiO; thermal oxidation; resistance switching;
D O I：
10.1143/JJAP.47.1635
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigated the structural and electrical properties of polycrystalline NiO thin films on Pt electrodes formed by thermal oxidation. A Ni-Pt alloy phase was found at the interface, which could be explained by the oxidation kinetics and reactions of Ni, NiO, and Pt. An increase in the oxidation temperature decreased the volume of the alloy layer and improved the crystalline quality of the NiO thin films. Pt/NiO/Pt structures were fabricated, and they showed reversible resistance switching from a high-resistance state (HRS) to a low-resistance state (LRS) and vice versa during unipolar current-voltage measurements. The oxidation temperature affected (did not affect) the HRS (LRS) resistance of the Pt/NiO/Pt structures. This indicated that the transport characteristics of HRS and LRS should be different.
引用
收藏
页码：1635 / 1638
页数：4
相关论文
共 18 条
  • [1] Structural investigations of Pt/TiOx electrode stacks for ferroelectric thin film devices
    Cao, JL
    Solbach, A
    Klemradt, U
    Weirich, T
    Mayer, J
    Horn-Solle, H
    Böttger, U
    Schorn, PJ
    Schneller, T
    Waser, R
    [J]. JOURNAL OF APPLIED PHYSICS, 2006, 99 (11)
  • [2] High-speed resistive switching of TiO2/TiN nano-crystalline thin film
    Fujimoto, M
    Koyama, H
    Hosoi, Y
    Ishihara, K
    Kobayashi, S
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (8-11): : L310 - L312
  • [3] Ni growth on vicinal Pt(111): low temperature exchange and formation of ordered surface alloys
    Gambardella, P
    Kern, K
    [J]. SURFACE SCIENCE, 2001, 475 (1-3) : L229 - L234
  • [4] Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: Homogeneous/inhomogeneous transition of current distribution
    Inoue, I. H.
    Yasuda, S.
    Akinaga, H.
    Takagi, H.
    [J]. PHYSICAL REVIEW B, 2008, 77 (03)
  • [5] Temperature dependence of high- and low-resistance bistable states in polycrystalline NiO films
    Jung, Kyooho
    Seo, Hongwoo
    Kim, Yongmin
    Im, Hyunsik
    Hong, JinPyo
    Park, Jae-Wan
    Lee, Jeon-Kook
    [J]. APPLIED PHYSICS LETTERS, 2007, 90 (05)
  • [6] Decrease in switching voltage fluctuation of Pt/NiOx/Pt structure by process control
    Jung, Ranju
    Lee, Myoung-Jae
    Seo, Sunae
    Kim, Dong Chirl
    Park, Gyeong-Su
    Kim, Kihong
    Ahn, Seungeon
    Park, Youngsoo
    Yoo, In-Kyeong
    Kim, Jin-Soo
    Park, Bae Ho
    [J]. APPLIED PHYSICS LETTERS, 2007, 91 (02)
  • [7] Improvement of resistive memory switching in NiO using IrO2
    Kim, D. C.
    Lee, M. J.
    Ahn, S. E.
    Seo, S.
    Park, J. C.
    Yoo, I. K.
    Baek, I. G.
    Kim, H. J.
    Yim, E. K.
    Lee, J. E.
    Park, S. O.
    Kim, H. S.
    Chung, U-In
    Moon, J. T.
    Ryu, B. I.
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (23)
  • [8] Reversible resistance switching behaviors of Pt/NiO/Pt structures
    Kim, Dong-Wook
    Park, Bae Ho
    Jung, Ranju
    Seo, Sunae
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (8A): : 5205 - 5207
  • [9] Localized switching mechanism in resistive switching of atomic-layer-deposited TiO2 thin films
    Kim, Kyung Min
    Choi, Byung Joon
    Hwang, Cheol Seong
    [J]. APPLIED PHYSICS LETTERS, 2007, 90 (24)
  • [10] Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide
    Kinoshita, K.
    Tamura, T.
    Aoki, M.
    Sugiyama, Y.
    Tanaka, H.
    [J]. APPLIED PHYSICS LETTERS, 2006, 89 (10)
12