Growth studies of GaN and alloys on LiAlO2 by MOVPE

被引：22

作者：

Dikme, Y ^{[1
]}

van Gemmern, P ^{[1
]}

Chai, B ^{[1
]}

Hill, D ^{[1
]}

Szymakowski, A ^{[1
]}

Kalisch, H ^{[1
]}

Heuken, M ^{[1
]}

Jansen, RH ^{[1
]}

机构：

[1] Rhein Westfal TH Aachen, Inst Theoret Elektrotech, D-52074 Aachen, Germany

来源：

PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7 | 2005年 / 2卷 / 07期

关键词：

D O I：

10.1002/pssc.200461414

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Wurtzite GaN is usually used for optoelectronic devices. Because of the growth along the polar c-axis, the strong piezoelectric and spontaneous polarizations fields result in a band bending which is responsible for the poor electron-hole overlap in quantum well structures. The growth along the m-plane direction is one possibility to deposit non-polar material and leads to efficient recombination across the entire well of the QW structure. LiAlO2 (LAO) offers the advantage to grow GaN along the m-plane direction. This work provides the results from investigations on the deposition of GaN-based structures on LAO substrates by metal-organic chemical vapor deposition. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2161 / 2165

页数：5

共 50 条

[1] Crystal growth and properties of LiAlO2 and nonpolar GaN on LiAlO2 substrate
Chou, Mitch M. C.
Hang, D. R.
Kalisch, H.
Jansen, R. H.
Dikme, Y.
Heuken, Michael
Yablonskii, G. P.
JOURNAL OF APPLIED PHYSICS, 2007, 101 (10)
[2] Mechanism of LiAlO2 decomposition during the GaN growth on (100) γ-LiAlO2
Mogilatenko, A.
Neumann, W.
Richter, E.
Weyers, M.
Velickov, B.
Uecker, R.
JOURNAL OF APPLIED PHYSICS, 2007, 102 (02)
[3] Growth studies of m-GaN layers on LiAlO2 by MOCVD
Zou Jun
Liu Cheng-Xiang
Zhou Sheng-Ming
Wang Jun
Zhou Jian-Hua
Huang Tao-Hua
Han Ping
Xie Zi-Li
Zhang Rong
CHINESE PHYSICS, 2006, 15 (11): : 2706 - 2709
[4] Growth studies of m-GaN layers on LiAlO2 by MOCVD
Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
不详
不详
Chin. Phys., 2006, 11 (2706-2709):
[5] m-plane GaN/InGaN/AlInN on LiAlO2 grown by MOVPE
Behmenburg, H.
Wen, T. C.
Dikme, Y.
Mauder, C.
Khoshroo, L. Rahimzadeh
Chou, M. M. C.
Rzheutskii, M. V.
Lutsenko, E. V.
Yablonskii, G. P.
Woitok, J.
Kalisch, H.
Jansen, R. H.
Heuken, M.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2008, 245 (05): : 893 - 895
[6] Mechanisms of impurity incorporation during MOVPE growth of m-plane GaN layers on LiAlO2
Mauder, Christof
Reuters, Benjamin
Behmenburg, Hannes
De Souza, Roger A.
Woitok, Joachim F.
Chou, Mitch M. C.
Heuken, Michael
Kalisch, Holger
Jansen, Rolf H.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, 2011, 8 (7-8): : 2050 - 2052
[7] MOCVD growth of GaN on LiAlO2(100) substrates
Xu, K
Xu, J
Deng, PZ
Qiu, RS
Fang, ZJ
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1999, 176 (01): : 589 - 593
[8] MOCVD growth of GaN on LiAlO2(100) substrates
Shanghai Inst. Opt. Fine Mechanics, Chinese Academy of Sciences, P.O. Box 800-211, Shanghai 201800, China
Phys Status Solidi A, 1 (589-593):
[9] Growth and characterization of GaN on LiGaO2 and LiAlO2
Duan, SK
Teng, XG
Han, PD
Lu, DC
BLUE LASER AND LIGHT EMITTING DIODES II, 1998, : 158 - 161
[10] Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO2 substrates
Mauder, C.
Reuters, B.
Khoshroo, L. Rahimzadeh
Rzheutskii, M. V.
Lutsenko, E. V.
Yablonskii, G. P.
Woitok, J. F.
Heuken, M.
Kalisch, H.
Jansen, R. H.
JOURNAL OF CRYSTAL GROWTH, 2010, 312 (11) : 1823 - 1827

← 1 2 3 4 5 →