Bandstructure modulation of two-dimensional WSe2 by electric field

被引：33

作者：

Dai, Xianqi ^{[1
,2
]}

Li, Wei ^{[1
,3
]}

Wang, Tianxing ^{[1
]}

Wang, Xiaolong ^{[1
]}

Zhai, Caiyun ^{[1
]}

机构：

[1] Henan Normal Univ, Coll Phys & Elect Engn, Xinxiang 453007, Peoples R China

[2] Zhengzhou Normal Univ, Dept Phys, Zhengzhou 450044, Henan, Peoples R China

[3] Henan Univ Urban Construct, Sch Math & Phys, Pingdingshan 467036, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2015年 / 117卷 / 08期

基金：

中国国家自然科学基金;

关键词：

MOS2 ATOMIC LAYERS; BORON-NITRIDE; PHASE GROWTH; GRAPHENE; WS2; SUPERCONDUCTIVITY; HETEROSTRUCTURES; NANOSHEETS; MONOLAYER; NANOTUBES;

D O I：

10.1063/1.4907315

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By means of density functional theory computations, we study band-gap tuning in multi-layer WSe2 sheets by external electric fields. It shows that the fundamental band gap of WSe2 film continuously decreases with an increasing vertical electric field, eventually rendering them metallic. The critical electric fields, at which the semiconductor-to-metal transition occurs, are predicted to be in the range of 0.6-2 V/nm depending on the number of layers. This gap-tuning effect yields a robust relationship, which is essentially characterized by the giant Stark effect (GSE) coefficient S, for the rate of change of band gap with applied external field. The GSE coefficient S is proportional to the number of layers and it can be expressed as (n - 1) c/2. (C) 2015 AIP Publishing LLC.

引用

页数：6

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