Effects of temperature on InGaN/GaN LEDs with different MQW structures

The temperature dependence of the emission performance of InGaN/GaN multiple-quantum well (MQW) light-emitting diodes (LEDs) with different configurations adjacent to the MQWs was investigated. For an LED with a p-AlGaN cladding layer above the top GaN barrier of the MQWs, the optical performance was increased and this may be due to a reduction in overflowing of electrons from the quantum wells compared to that of LED without this layer. In addition, as the temperature was increased, the decrease in output power for the LED with a p-AlGaN cladding layer was lower than for the LED without a p-AlGaN layer. As a result, for an LED with a p-AlGaN electron blocking layer, an improved carrier confinement results in less temperature sensitivity to the output power. (C) 2004 The Electrochemical Society.