High energy Li ion irradiation effects in ferroelectric PZT and SBT thin films

被引:22
作者
Angadi, B
Victor, P
Jali, VM
Lagare, MT
Kumar, R
Krupanidhi, SB [1 ]
机构
[1] Gulbarga Univ, Dept Phys, Gulbarga 585106, India
[2] Indian Inst Sci, Ctr Mat Res, Bangalore 560012, Karnataka, India
[3] Ctr Nucl Sci, New Delhi 110067, India
关键词
ferroelectric properties; ion bombardment; phase transitions; laser ablation;
D O I
10.1016/S0040-6090(03)00448-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The ferroelectric Pb(Zr0.53Ti0.47)O-3 (PZT) and SrBi2Ta2O9 (SBT) thin films were prepared by laser ablation technique. The dielectric analysis, capacitance-voltage, ferroelectric hysteresis and DC leakage current measurements were performed before and after 50 MeV Li3+ ion irradiation. In both thin films, the irradiation produced some amount of amorphisation, considerable degradation in the ferroelectric properties and change in DC conductivity. On irradiation of these thin films, the phase transition temperature [T-c] of PZT decreased considerably from 628 to 508 K, while SBT exhibited a broad and diffuse transition with its T-c decreased from 573 to 548 K. The capacitance-voltage curve at 100 kHz showed a double butterfly loop with a large decrease in the capacitance and switching voltage. There was decrease in the ferroelectric hysteresis loop, remanant polarisation and coercive field. After annealing at a temperature of 673 K for 10 min while PZT partially regained the ferroelectric properties, while SBT did not. The DC conductivity measurements showed a shift in the onset of non-linear conduction region in irradiated SBT. The degradation of ferroelectric properties of the irradiated thin films is attributed to the irradiation-induced partial amorphization and the pinning of the ferroelectric domains by trapped charges. The regaining of properties after annealing is attributed to the thermal annealing of the defects generated during the irradiation. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:40 / 48
页数:9
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