Highly sensitive glucose sensor based on work function changes measured by an EMOSFET

In this paper, glucose is potentiometrically measured by using a specific field effect transistor, the (MOSFET)-M-E. In this device, glucose oxidase is immobilized within a bovine serum albumin matrix, using glutaraldehyde. This layer is deposited on the top of an electroactive Os-polyvinylpyridine layer containing horseradish peroxidase, which is used as the gate material of the FET. The basic principle of the sensor is to measure the glucose concentration by means of measuring the change in the work function of the electroactive gate due to its redox reaction with the H2O2, generated by the reaction between glucose and glucose oxidase. The change in the work function can be detected as a change in the threshold voltage of the FET. Moreover, a measuring mode called "constant current potentiometry" has been applied to improve the sensitivity of the sensor. The sensitivity of the sensor working in this mode is found to be much higher than the Nernstian value. The experimental results show that the detection limit of the sensor can be tuned depending on the value of the applied current and the glucose oxidase concentration in the gate.