Study on Quantum Electro-Dynamics in Vertical MOSFET

被引：0

作者：

Muraguchi, Masakazu ^{[1
,2
]}

Endoh, Tetsuo ^{[2
]}

机构：

[1] Tohoku Univ, Interdisciplinary Res Ctr, Sendai, Miyagi 9808578, Japan

[2] JST CREST, Tokyo 1020075, Japan

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 2010年 / E93C卷 / 05期

基金：

日本科学技术振兴机构;

关键词：

vertical MOSFET; quantum electro-dynamics; resonant tunneling; surrounding gate; time-dependent Schrodinger equation;

D O I：

10.1587/transele.E93.C.552

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied transmission property of electron in vertical MOSFET (V-MOSFET) from the viewpoint of quantum electrodynamics. To obtain the intuitive picture of electron transmission property through channel of the V-MOSFET, we solve the time-dependent Schrodinger equation in real space by employing the split operator method. We injected an electron wave packet into the body of the V-MOSFET from the source, and traced the time-development of electron-wave function in the body and drain region. We successfully showed that the electron wave function propagates through the resonant states of the body potential. Our suggested approaches open the quantative and intuitive discussion for the carrier dynamics in the V-MOSFET on quantum limit.

引用

页码：552 / 556

页数：5

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