Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

被引：134
作者：
Qiang, Li [1 ,2 ]
May, Lau Kei [1 ,2 ]
机构：
[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China
[2] Hong Kong Univ Sci & Technol, Inst Adv Study, Kowloon, Hong Kong, Peoples R China
来源：
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS | 2017年 / 63卷 / 04期
关键词：
QUANTUM-DOT LASERS; MOLECULAR-BEAM EPITAXY; INVERTED IN0.53GA0.47AS MOSHEMTS; THREADING DISLOCATION DENSITIES; SINGLE-DOMAIN GAAS; MICRO-DISK LASERS; ROOM-TEMPERATURE; MONOLITHIC INTEGRATION; DEFECT REDUCTION; SI SUBSTRATE;
D O I：
10.1016/j.pcrysgrow.2017.10.001
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Monolithic integration of 111-V on silicon has been a scientifically appealing concept for decades. Notable progress has recently been made in this research area, fueled by significant interests of the electronics industry in high-mobility channel transistors and the booming development of silicon photonics technology. In this review article, we outline the fundamental roadblocks for the epitaxial growth of highly mismatched III-V materials, including arsenides, phosphides, and antimonides, on (001) oriented silicon substrates. Advances in heteroepitaxy and selective-area hetero-epitaxy from micro to nano length scales are discussed. Opportunities in emerging electronics and integrated photonics are also presented.
引用
收藏
页码：105 / 120
页数：16
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