Silicon etching in HNO3/HF solution:: Charge balance for the oxidation reaction

被引：69

作者：

Kooij, ES ^{[1
]}

Butter, K ^{[1
]}

Kelly, JJ ^{[1
]}

机构：

[1] Univ Utrecht, Debye Inst, NL-3508 TA Utrecht, Netherlands

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 1999年 / 2卷 / 04期

关键词：

D O I：

10.1149/1.1390775

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The potential dependence of the current and the etch rate of p- and n- type silicon electrodes in 6 M HNO3-6 M HF solution was investigated. Hydrogen evolved during etching at the open-circuit potential was also measured. These results give insight into the different processes occurring during etching. A detailed charge balance for silicon oxidation in the etchant is deduced. (C) 1999 The Electrochemical Society. S1099- 0062( 98) 11- 039- 8. All rights reserved.

引用

页码：178 / 180

页数：3

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