Femtosecond laser hyperdoping and micro/nanotexturing of silicon for photovoltaics

被引:4
作者
Franta, Benjamin [1 ]
Sher, Meng-Ju [2 ]
Lin, Yu-Ting [1 ]
Phillips, Katherine C. [1 ]
Mazur, Eric [1 ,2 ]
机构
[1] Harvard Univ, Sch Engn & Appl Sci, 9 Oxford St, Cambridge, MA 02138 USA
[2] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA
来源
LASER APPLICATIONS IN MICROELECTRONIC AND OPTOELECTRONIC MANUFACTURING (LAMOM) XVII | 2012年 / 8243卷
关键词
intermediate band; photovoltaic; optical hyperdoping; femtosecond laser; silicon; chalcogen; surface texturing; light management; INFRARED-ABSORPTION; EFFICIENCY;
D O I
10.1117/12.908671
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We have developed a technique, optical hyperdoping, for doping semiconductors to unusually high levels and endowing them with remarkable optoelectronic properties. By irradiating silicon (Si) with a train of femtosecond laser pulses in the presence of heavy chalcogen (sulfur, selenium, and tellurium) compounds, a 100-300 nm thin layer of Si is doped to non-equilibrium levels (similar to 1 at. %). Hyperdoped silicon exhibits near-unity photon absorptance from the ultraviolet (lambda < 0.25 mu m) to the mid-infrared (lambda > 2.5 mu m), even though crystalline silicon is normally transparent to wavelengths lambda > 1.1 mu m due to its band gap at 1.1 eV. Concurrent to doping, we are also able to use fs-laser irradiation to create light-trapping surface textures on the micro- and nanometer scales. Together, optical hyperdoping and surface texturing represent a route towards high-performance thin film photovoltaic devices.
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页数:7
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