High-speed and highly efficient Si optical modulator with strained SiGe layer

被引：12

作者：

Fujikata, Junichi ^{[1
]}

Noguchi, Masataka ^{[1
]}

Kim, Younghyun ^{[2
]}

Han, Jaehoon ^{[2
]}

Takahashi, Shigeki ^{[1
]}

Nakamura, Takahiro ^{[1
]}

Takenaka, Mitsuru ^{[2
]}

机构：

[1] PETRA, Tsukuba, Ibaraki 3058569, Japan

[2] Univ Tokyo, Bunkyo Ku, Tokyo 1138656, Japan

来源：

APPLIED PHYSICS EXPRESS | 2018年 / 11卷 / 03期

关键词：

MACH-ZEHNDER MODULATOR; HOLE MOBILITY; LOW-POWER; SILICON; GERMANIUM;

D O I：

10.7567/APEX.11.032201

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We developed a high- speed and highly efficient depletion-type Si optical modulator ( Si-MOD) with a pn junction by applying a p-type-doped strained SiGe layer, which was stacked on a lateral pn junction-type Si-MOD. We designed an optimum Si-MOD, which is one of the most efficient Si-MODs with a pn junction, and demonstrated highly efficient modulations of 0.67 and 0.81V center dot cm for V pi L at dc reverse bias voltages of-0.5 and-2V(dc), respectively. We also demonstrated a high-speed operation of 25 Gbps for the Si-MOD at a wavelength of around 1.3 mu m. (C) 2018 The Japan Society of Applied Physics

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页数：4

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