Self-Assembled InAs/GaAs Coupled Quantum Dots for Photonic Quantum Technologies

被引:25
|
作者
Jennings, Cameron [1 ]
Ma, Xiangyu [2 ]
Wickramasinghe, Thushan [3 ]
Doty, Matthew [2 ]
Scheibner, Michael [1 ]
Stinaff, Eric [3 ]
Ware, Morgan [4 ]
机构
[1] Univ Calif, Sch Nat Sci, 5200 North Lake Rd, Merced, CA 95343 USA
[2] Univ Delaware, Dept Mat Sci & Engn, Newark, DE 19716 USA
[3] Ohio Univ, Nanoscale & Quantum Phenomena Inst, Dept Phys & Astron, Athens, OH 45701 USA
[4] Univ Arkansas, Inst Nanosci & Engn, West Dickson 731, Fayetteville, AR 72701 USA
基金
美国国家科学基金会;
关键词
coupled quantum dots; quantum dots; quantum information; quantum optics; SCANNING-TUNNELING-MICROSCOPY; ELECTRON-SPIN; OPTICAL-PROPERTIES; PHONON-SCATTERING; ENTANGLEMENT; EXCITONS; STATES; GENERATION; RELAXATION; EMISSION;
D O I
10.1002/qute.201900085
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Coupled quantum dots (CQDs) that consist of two InAs QDs stacked along the growth direction and separated by a relatively thin tunnel barrier have been the focus of extensive research efforts. The expansion of available states enabled by the formation of delocalized molecular wavefunctions in these systems has led to significant enhancement of the already substantial capabilities of single QD systems and have proven to be a fertile platform for studying light-matter interactions, from semi-classical to purely quantum phenomena. Observations unique to CQDs, including tunable g-factors and radiative lifetimes, in situ control of exchange interactions, coherent phonon effects, manipulation of multiple spins, and nondestructive spin readout, along with possibilities such as quantum-to-quantum transduction with error correction and multipartite entanglement, open new and exciting opportunities for CQD-based photonic quantum technologies. This review is focused on recent CQD work, highlighting aspects where CQDs provide a unique advantage and with an emphasis on results relevant to photonic quantum technologies.
引用
收藏
页数:31
相关论文
共 50 条
  • [21] Abnormal temperature dependent photoluminescence of self-assembled InAs/GaAs surface quantum dots with high areal density
    Zhou, X. L.
    Chen, Y. H.
    Liu, J. Q.
    Xu, B.
    Ye, X. L.
    Wang, Z. G.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2010, 42 (09) : 2455 - 2459
  • [22] Carrier thermal escape in families of InAs/InP self-assembled quantum dots
    Gelinas, Guillaume
    Lanacer, Ali
    Leonelli, Richard
    Masut, Remo A.
    Poole, Philip J.
    PHYSICAL REVIEW B, 2010, 81 (23):
  • [23] Controlling the shape of InAs self-assembled quantum dots by thin GaAs capping layers
    Takehana, K
    Pulizzi, F
    Patané, A
    Henini, M
    Main, PC
    Eaves, L
    Granados, D
    Garcia, JM
    JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) : 155 - 160
  • [24] Towards Scalable Entangled Photon Sources with Self-Assembled InAs/GaAs Quantum Dots
    Wang, Jianping
    Gong, Ming
    Guo, G. -C.
    He, Lixin
    PHYSICAL REVIEW LETTERS, 2015, 115 (06)
  • [25] Electronic properties of InAs/GaAs self-assembled quantum dots studied by photocurrent spectroscopy
    Fry, PW
    Skolnick, MS
    Mowbray, DJ
    Itskevich, IE
    Finley, JJ
    Wilson, LR
    Schumacher, KL
    Barker, JA
    O'Reilly, EP
    Al-Khafaji, M
    Cullis, AG
    Hopkinson, M
    Clark, JC
    Hill, G
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2001, 9 (01) : 106 - 113
  • [26] Ultrafast carrier dynamics of resonantly excited InAs/GaAs self-assembled quantum dots
    Král, K
    Zdenek, P
    Khás, Z
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 20 (3-4) : 290 - 294
  • [27] Optical properties of self-assembled InAs quantum dots grown on GaAs(211)A substrate
    Sugimura, A
    Ohnishi, K
    Umezu, I
    Vaccaro, PO
    THIN SOLID FILMS, 2000, 380 (1-2) : 97 - 100
  • [28] Temperature dependence of photoreflectance study on InAs/GaAs self-assembled quantum dots.
    Jan, GJ
    Chang, SM
    Lai, CM
    Chen, MC
    Lin, HH
    OPTOELECTRONIC MATERIALS AND DEVICES, 1998, 3419 : 159 - 168
  • [29] Piezoelectric effects in InAs/GaAs(N11) self-assembled quantum dots
    Sanguinetti, S
    Gurioli, M
    Grilli, E
    Guzzi, M
    Henini, M
    THIN SOLID FILMS, 2000, 380 (1-2) : 198 - 200
  • [30] InAs/GaAs(100) self-assembled quantum dots: Arsenic pressure and capping effects
    Riel, BJ
    Hinzer, K
    Moisa, S
    Fraser, J
    Finnie, P
    Piercy, P
    Fafard, S
    Wasilewski, ZR
    JOURNAL OF CRYSTAL GROWTH, 2002, 236 (1-3) : 145 - 154