RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates

被引:33
作者
Johansson, Sofia [1 ]
Egard, Mikael [1 ]
Ghalamestani, Sepideh Gorji [1 ]
Borg, B. Mattias [1 ]
Berg, Martin [1 ]
Wernersson, Lars-Erik [1 ]
Lind, Erik [1 ]
机构
[1] Lund Univ, S-22100 Lund, Sweden
基金
瑞典研究理事会;
关键词
High-k; InAs; MOSFET; nanowire; RF; IMPACT-IONIZATION;
D O I
10.1109/TMTT.2011.2163076
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present dc and RF characterization of InAs nanowire field-effect transistors (FETs) heterogeneously integrated on Si substrates in a geometry suitable for circuit applications. The FET consists of an array of 182 vertical InAs nanowires with about 6-nm HfO high-gate dielectric and a wrap-gate length of 250 nm. The transistor has a transconductance of 155 mS/mm and an on-current of 550 mA/mm at a gate voltage of 1.5 V and a drain voltage of 1 V. S-parameter measurements yield an extrinsic cutoff frequency of 9.3 GHz and a extrinsic maximum oscillation frequency of 14.3 GHz.
引用
收藏
页码:2733 / 2738
页数:6
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