We present dc and RF characterization of InAs nanowire field-effect transistors (FETs) heterogeneously integrated on Si substrates in a geometry suitable for circuit applications. The FET consists of an array of 182 vertical InAs nanowires with about 6-nm HfO high-gate dielectric and a wrap-gate length of 250 nm. The transistor has a transconductance of 155 mS/mm and an on-current of 550 mA/mm at a gate voltage of 1.5 V and a drain voltage of 1 V. S-parameter measurements yield an extrinsic cutoff frequency of 9.3 GHz and a extrinsic maximum oscillation frequency of 14.3 GHz.
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Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USAStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Kim, Eun Ji
;
Wang, Lingquan
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Univ Calif San Diego, Dept Elect & Comp Engn, San Diego, CA 92093 USAStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Wang, Lingquan
;
Asbeck, Peter M.
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Univ Calif San Diego, Dept Elect & Comp Engn, San Diego, CA 92093 USAStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Asbeck, Peter M.
;
Saraswat, Krishna C.
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Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USAStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Saraswat, Krishna C.
;
McIntyre, Paul C.
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Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USAStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
机构:
Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USAStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Kim, Eun Ji
;
Wang, Lingquan
论文数: 0引用数: 0
h-index: 0
机构:
Univ Calif San Diego, Dept Elect & Comp Engn, San Diego, CA 92093 USAStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Wang, Lingquan
;
Asbeck, Peter M.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Calif San Diego, Dept Elect & Comp Engn, San Diego, CA 92093 USAStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Asbeck, Peter M.
;
Saraswat, Krishna C.
论文数: 0引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USAStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Saraswat, Krishna C.
;
McIntyre, Paul C.
论文数: 0引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USAStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA