A 1.55-μm Waveband Optical Absorption Characterization of an Electro-Absorption Device with a Highly Stacked InAs/InGaAlAs Quantum Dot Structure

被引：0

作者：

Yamamoto, Naokatsu ^{[1
]}

Akahane, Kouichi ^{[1
]}

Umezawa, Toshimasa ^{[1
]}

Kawanishi, Tetsuya ^{[1
]}

机构：

[1] Natl Inst Informat & Commun Technol NICT, Koganei, Tokyo 1848795, Japan

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 2015年 / E98C卷 / 08期

关键词：

quantum dot; electro-absorption; optical modulator; quantum confined stark effect; waveguide device; LASER;

D O I：

10.1587/transele.E98.C.878

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A quantum dot (QD) electro-absorption device was successfully developed with a highly stacked InAs/InGaAlAs QD structure. A 1.55-mu m waveband electro-absorption effect and a quantum confined Stark effect of approximately 22 meV under the application of a 214-kV/cm reverse bias electric field are clearly observed in the developed QD device.

引用

页码：878 / 881

页数：4

共 3 条

[1] A 1.55-μm Waveband Optical Absorption Characterization of Highly-stacked InAs/InGaAlAs Quantum Dot Structure for Electro-absorption Devices
Yamamoto, N.
Akahane, K.
Umezawa, T.
Kawanishi, T.
2014 INTERNATIONAL TOPICAL MEETING ON MICROWAVE PHOTONICS (MWP) AND THE 2014 9TH ASIA-PACIFIC MICROWAVE PHOTONICS CONFERENCE (APMP), 2014, : 93 - 96
[2] An integrated circuit subsystem of quantum dot semiconductor optical amplifier coupled with electro-absorption modulator and its application in wavelength conversion
Yu, Yi
Huang, Lirong
Xiong, Meng
Yan, Lijie
Tian, Peng
OPTICS COMMUNICATIONS, 2011, 284 (07) : 1847 - 1854
[3] Electro-absorption and Electro-optic Characterization of L-Band InAs& x002F;InP Quantum-dash Waveguide
Alkhazraji, E.
Ragheb, A. M.
Esmail, M. A.
Tareq, Q.
Fathallah, H.
Alshebeili, S. A.
Qureshi, K. K.
Khan, M. Z. M.
IEEE PHOTONICS JOURNAL, 2020, 12 (03):

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