Electron paramagnetic resonance spectra of interface defects in nitric oxide treated Si/SiO2

被引：0

作者：

von Bardeleben, HJ ^{[1
]}

Cantin, JL ^{[1
]}

Gosset, LG ^{[1
]}

Ganem, JJ ^{[1
]}

Trimaille, I ^{[1
]}

Rigo, S ^{[1
]}

机构：

[1] Univ Paris 06, Phys Solides Grp, UMR 75 88, F-75005 Paris, France

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1999年 / 245卷

关键词：

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The effect of post-oxidation treatments in nitric oxide (NO) on the interface defects in (100) Si/SiO2 is studied by the electron paramagnetic resonance (EPR) spectroscopy (9 GHz and 300 K) and nuclear analysis techniques. Our results show that the interface structure is modified due to a self-limiting, localized incorporation of NO at the interface. The modified interface has an intrinsic interface defect density of less than or equal to 10(11) cm(-2). NO thermal treatments open the perspective for the growth of hydrogen free low defect density Si/SiO2 structures. (C) 1999 Published by Elsevier Science B.V. All rights reserved.

引用

页码：169 / 174

页数：6

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