Solar-blind AlxGa1-xN-based avalanche photodiodes -: art. no. 223502

被引：29

作者：

Tut, T ^{[1
]}

Butun, S ^{[1
]}

Butun, B ^{[1
]}

Gokkavas, M ^{[1
]}

Yu, HB ^{[1
]}

Ozbay, E ^{[1
]}

机构：

[1] Bilkent Univ, Nanotechnol Res Ctr, TR-06800 Ankara, Turkey

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 22期

关键词：

D O I：

10.1063/1.2135952

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the Metalorganic Chemical Vapor Deposition (MOCVD) growth, fabrication, and characterization of solar blind AlxGa1-xN/GaN-based avalanche photodiodes. The photocurrent voltage characteristics indicate a reproducible avalanche gain higher than 25 at a 72 V applied reverse bias. Under a 25 V reverse bias voltage, the 100 mu m diameter devices had a maximum quantum efficiency of 55% and a peak responsivity of 0.11 A/W at 254 nm, and a NEP of 1.89x10(-16) W/Hz(1/2). (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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