Modification of the structure of diamond with MeV ion implantation

被引:27
作者
Bosia, F. [1 ,2 ]
Argiolas, N. [3 ]
Bazzan, M. [3 ]
Olivero, P. [1 ,2 ]
Picollo, F. [1 ,2 ]
Sordini, A. [4 ]
Vannoni, M. [4 ]
Vittone, E. [1 ,2 ]
机构
[1] Univ Turin, Dept Expt Phys, NIS Ctr Excellence, I-10124 Turin, Italy
[2] INFN Torino, Turin, Italy
[3] Univ Padua, Dept Phys, I-35100 Padua, Italy
[4] CNR, Ist Nazl Ott, Florence, Italy
关键词
Ion implantation; Damaged diamond; Graphitization; Annealing; Mechanical deformation; X-Ray diffraction; numerical analysis; SINGLE-CRYSTAL DIAMOND; RADIATION-DAMAGE; DEFECTS; LAYERS;
D O I
10.1016/j.diamond.2011.03.025
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present experimental results and numerical simulations to investigate the modification of structural-mechanical properties of ion-implanted single-crystal diamond. A phenomenological model is used to derive an analytical expression for the variation of mass density and elastic properties as a function of damage density in the crystal. These relations are applied together with SRIM Monte Carlo simulations to set up finite element simulations for the determination of internal strains and surface deformation of MeV-ion-implanted diamond samples. The results are validated through comparison with high resolution X-ray diffraction and white-light interferometric profilometry experiments. The former are carried out on 180 key B implanted diamond samples, to determine the induced structural variation, in terms of lattice spacing and disorder, whilst the latter are performed on 1.8 MeV He implanted diamond samples to measure surface swelling. The effect of thermal processing on the evolution of the structural-mechanical properties of damaged diamond is also evaluated by performing the same profilometric measurements after annealing at 1000 degrees C. and modeling the obtained trends with a suitably modified analytical model. The results allow the development of a coherent model describing the effects of MeV-ion-induced damage on the structural-mechanical properties of single-crystal diamond. In particular, we suggest a more reliable method to determine the so-called diamond "graphitization threshold" for the considered implantation type. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:774 / 778
页数:5
相关论文
共 24 条
[1]   PULSED-LASER ANNEALING OF P-IMPLANTED DIAMOND [J].
ALLEN, MG ;
PRAWER, S ;
JAMIESON, DN ;
KALISH, R .
APPLIED PHYSICS LETTERS, 1993, 63 (15) :2062-2064
[2]   Structural defects in homoepitaxial diamond layers grown on off-axis Ib HPHT substrates [J].
Bauer, T. ;
Schreck, M. ;
Hartwig, J. ;
Liu, X. H. ;
Wong, S. P. ;
Stritzker, B. .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2006, 203 (12) :3056-3062
[3]   Finite element analysis of ion-implanted diamond surface swelling [J].
Bosia, Federico ;
Calusi, Silvia ;
Giuntini, Lorenzo ;
Lagomarsino, Stefano ;
Lo Giudice, Alessandro ;
Massi, Mirko ;
Olivero, Paolo ;
Picollo, Federico ;
Sciortino, Silvio ;
Sordini, Andrea ;
Vannoni, Maurizio ;
Vittone, Ettore .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2010, 268 (19) :2991-2995
[4]   HIGH-SPEED NONCONTACT PROFILER BASED ON SCANNING WHITE-LIGHT INTERFEROMETRY [J].
DECK, L ;
DEGROOT, P .
APPLIED OPTICS, 1994, 33 (31) :7334-7338
[5]   Fabrication of Ultrathin Single-Crystal Diamond Membranes [J].
Fairchild, Barbara A. ;
Olivero, Paolo ;
Rubanov, Sergey ;
Greentree, Andrew D. ;
WaIdermann, Felix ;
Taylor, Robert A. ;
Walmsley, Ian ;
Smith, Jason M. ;
Huntington, Shane ;
Gibson, Brant C. ;
Jamieson, David N. ;
Prawer, Steven .
ADVANCED MATERIALS, 2008, 20 (24) :4793-+
[6]  
Fewster PaulF., 2003, XRAY SCATTERING SEMI, V2nd
[7]   Formation and characterization of graphitized layers in ion-implanted diamond [J].
Gippius, AA ;
Khmelnitskiy, RA ;
Dravin, VA ;
Tkachenko, SD .
DIAMOND AND RELATED MATERIALS, 1999, 8 (8-9) :1631-1634
[8]   Amorphization and graphitization of single-crystal diamond - A transmission electron microscopy study [J].
Hickey, D. P. ;
Jones, K. S. ;
Elliman, R. G. .
DIAMOND AND RELATED MATERIALS, 2009, 18 (11) :1353-1359
[9]   RAMAN-SCATTERING FROM MEV-ION IMPLANTED DIAMOND [J].
HUNN, JD ;
WITHROW, SP ;
WHITE, CW ;
HEMBREE, DM .
PHYSICAL REVIEW B, 1995, 52 (11) :8106-8111
[10]   The nature of damage in ion-implanted and annealed diamond [J].
Kalish, R ;
Reznik, A ;
Nugent, KW ;
Prawer, S .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 148 (1-4) :626-633